Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
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چکیده
منابع مشابه
Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires.
The optical polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (μ-PL) and interpreted in terms of a strain-dependent 6 × 6 k·p theoretical model. The NW heterostructures were fabricated in two steps: the Si-doped n-type c-axis GaN NW cores were grown by molecular beam epitaxy (MBE) and then ep...
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Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and Xray diffraction (XRD). Full width at half-maximum (FWHM) of the near-bandedge emission of undoped layers is between 4.9 and 10meV, exhibiting no distinct dependence on buffer growth conditions. PL as well ...
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Using a previously shown method, we prepared 2”-GaN wafers as templates for a self separation process. Self separation is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates consist of GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are masked with 200nm of SiN that are structur...
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We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources ~for Ga, Al, and Er! and a plasma gas source for N2. The emission spectrum of the GaN:Er...
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GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samp...
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